Lithography Equipment

The Suss MA/BA6 Gen4 is a semi-automated mask and bond aligner. The MA6 is designed for all standard lithography applications for full field exposure of wafers up to 4" in size, as well as smaller pieces. The MA6 handles both proximity and contact (soft, hard, and vacuum) printing, enabling a resolution of 2.5 microns in proximity mode and sub-micron in vacuum contact mode. The topside alignment system provides an alignment accuracy of ± 0.5 microns. The bottomside alignment system provides an alignment accuracy of < 1 micron. The BA6 bond aligner aligns wafers and clamps them in fixtures to maintain position during manual transfer to the wafer bonder. 

SOP

IMSE contact

For additional information about the Karl Suss MA/BA6 or to request training, please contact IMSE cleanroom staff.

Dr. Rajinder Deol (deolr@wustl.edu)
Dr. Edwin Carlen (carlen@wustl.edu)

The Heidelberg DWL 66+ Laser Writer is a direct-write photolithography system to pattern a resist layer by either topside exposure or bottomsideexposure. 3D patterns can be generated by using the gray-scale exposure mode. Photomasks for contact lithography are made with the laser writer. Standard photomasks are soda-lime glass or quartz plates coated with thin chromium and anti-reflection layers.

Specifications

• 375 nm UV laser
• Maximum substrate size: 9 in × 9 in
• Minimum substrate size: 10 mm × 10 mm
• Maximum write area: 200 mm × 200 mm
• Substrate thickness up to 6 mm
• Interferometer resolution: 10 nm
• Minimum feature size: 600 nm (2mm head) and 1 micron (10 mm head)
• Data input formats (DXF, CIF, GDSII and Gerber files)

SOP

IMSE contact

For additional information about the laser writer or to request training, please contact IMSE cleanroom staff.

Dr. Rajinder Deol (deolr@wustl.edu)
Dr. Edwin Carlen (carlen@wustl.edu)

The Elionix ELS-S50EX is a 50 keV electron beam lithography system capable of writing features as small as 10 nm over a large field size.

Specifications

• ZrO/W thermal field emitter
• 50 kV accelerating voltage, 2 nm beam diameter, 10 pA to 50 nA beam current
• Minimum feature width: 10 nm
• Maximum lithographic field size: 3 × 3 mm
• Beam positioning resolution: 0.1 nm @ 100 μm field and 1.0 nm @ 1 mm field
• Field stitching accuracy: ± 20 nm
• Accommodates up to 4 in wafers

Data preperation

The lithography software BEAMER by GenISys is available to prepare your design for optimum electron and laser-beam exposure. Layout formats include GDSII, CIF, DXF, LTXT, OASIS, BMP, and DWG 

SOP

IMSE contact

For additional information about the Elionix system or to request training, please contact IMSE cleanroom staff.

Dr. Rajinder Deol (deolr@wustl.edu)
Dr. Edwin Carlen (carlen@wustl.edu)

The Quantum X shape is a high-accuracy 3D printer employing two-photon polymerization. It can be used for rapid prototyping and wafer-scale batch production of complex 2.5D and 3D shapes across various scales with submicron precision and accuracy.

SOP

IMSE contact

For additional information about the Nanoscribe Quantum X or to request training, please contact IMSE cleanroom staff.

Dr. Rajinder Deol (deolr@wustl.edu)
Dr. Edwin Carlen (carlen@wustl.edu)

The Cee Apogee spin coaters are located in Solvent Hoods 1 & 2. The spinners are used to spin cast uniform thin resist films on substrates up to 4-inch wafers for photolithography and electron beam lithography.

SOP

IMSE contact

For additional information about the Cee spin coaters or to request training, please contact IMSE cleanroom staff.

Dr. Rajinder Deol (deolr@wustl.edu)
Dr. Edwin Carlen (carlen@wustl.edu)

 The Chemat KW-4AH-350 hotplates provide high temperature uniformity and resolution for baking photoresist and electron-beam resist.

Specifications

• Temperature uniformity: ± 1 oC
• Temperature Resolution: 1 oC
• Temperature Range: 50 – 350 oC
• Substrate Size: up to 6 in

IMSE contact

For additional information about the hotplates or to request training, please contact IMSE cleanroom staff.

Dr. Rajinder Deol (deolr@wustl.edu)
Dr. Edwin Carlen (carlen@wustl.edu)